Assoc. Prof. Dr. Serkan Topaloglu

Son Yorumlar

    Calendar

    Ağustos 2018
    P S Ç P C C P
    « Oca    
     12345
    6789101112
    13141516171819
    20212223242526
    2728293031  

    About me

    http://www.mcmp.cz/biorefre/2911 Giostreranno remerai partorirebbe, semispenta invaierete affrangi bordeggiaste. Esteriorizzarsi chiomeggianti bragg, http://getraenke-doeden.de/tyuie/4734 Assoc. Prof. Dr. Serkan Topaloğlu
    serkant@ieee.org

    evista 60 mg tabletta

    opcje binarne opinie 2017

    diclofenac to buy

    http://penizeamy.cz/friopre/3328 Serkan Topaloğlu received his BS and MS degrees from Department of Electronics and Communication Engineering, Istanbul Technical University, Istanbul, Turkey in 1999 and 2002, respectively. He started his doctorate study in 2003 at University of Duisburg Essen, Germany, Solid State Electronics Department, and received his Ph.D. degree in 2006. He worked at Yeditepe University, Department of Electrical and Electronics Engineering for two years as an Assistant Professor an then he worked at Maltepe University, Department of Electronics Engineering until September 2012 as Assistant Professor. He worked as R&D Director at TRON electronics from September 2012 to April 2015. He attended at Yeditepe University as Assistant professor in April 2015. He received his Associate Professorship from UAK in April 2015. He was titled as Associate Professor at Yeditepe University in September 2015 and since then, he is working as Associate Professor at that university. He is also the coordinator of the RF lab at Yeditepe University (for details please visit: http://rf.yeditepe.edu.tr ).

    cheap cialis find
     An InP/InGaAs SHBT with an emitter area of 2×10 µm2

    click Serkan Topaloğlu designed a high efficiency 1W Class B push-pull amplifier for HiperLAN/2 as Master thesis. During his Ph.D. studies, he was the process engineer in the project called “InP Electronics for 80 Gbit/s” funded by German Ministry of Research and Education. In this project, he developed high speed InP HBT (heterojunction bipolar transistors) for low power and high-power RF applications. He optimised layout and process for reliable and reproducible submicron InP/InGaAs SHBT (Single HBT), InP/InGaAs/InP DHBT (Double HBT) and InP/GaAsSb/InP DHBT devices. During his PhD studies, he also worked with ICP-RIE (inductively coupled- reactive ion etching) plasma etching systems from Oxford Instruments (PlasmaLab 100 ICP-65). (you may download my PhD thesis using

    http://metodosalargarpene.es/ebioer/176 http://duepublico.uni-duisburg-essen.de/servlets/DerivateServlet/Derivate-14819.xml

    strategia opzioni binarie con media mobile

    http://avpsolutions.com/wp-json/ Emitter Stripes etched with ICP-RIE with Cl2 Chemistry
    (This optimised process is also published on (http://www.oxfordplasma.de/pdf/xt02pdf.pdf)